Micron Technology Inc and chip maker Intel Corporation, have revealed the availability of their 3D NAND technology, the highest-density flash memory.
Flash is the storage technology used inside the lightest laptops, fastest data centres and nearly every cellphone, tablet and mobile device.
“Micron and Intel’s collaboration has created an industry-leading solid-state storage technology that offers high density, performance and efficiency and is unmatched by any flash today,” said Brian Shirley, vice president of Memory Technology and Solutions at Micron Technology. “This 3D NAND technology has the potential to create fundamental market shifts. The depth of the impact that flash has had to date, from smartphones to flash-optimised supercomputing is really just scratching the surface of what’s possible.”
Rob Crooke, senior vice president and general manager, Non-Volatile Memory Solutions Group, Intel Corporation, said: “Intel’s development efforts with Micron reflect our continued commitment to offer leading and innovative non-volatile memory technologies to the marketplace.”
Crooke added that the significant improvements in density and cost enabled by the new 3D NAND technology innovation will accelerate solid-state storage in computing platforms.
The new 3D NAND technology, which was jointly developed by Intel and Micron, stacks layers of data storage cells vertically with extraordinary precision to create storage devices with three times higher capacity than competing NAND technologies.
